Cambridge GaN Devices (CGD) has revealed more details about a solution allowing the company to address EV powertrain applications over 100kW – a market worth over $10B - with its ICeGaN GaN technology ...

A 650-V bi-directional GaN IC combined with a high-speed isolated gate driver facilitates single-stage power conversion.

Cambridge GaN Devices has patented a technique for lowering losses in 100kW+ IGBT-based vehicle traction drives, at lower ...

ICeGaN technology allows EV engineers to enjoy GaN’s benefits in DC-to-DC converters, on-board chargers and potentially traction inverters. Combo ICeGaN further extends the benefits of CGD’s ...

Cambridge GaN Devices (CGD) has revealed more details about a solution that will enable the company to address EV powertrain ...

ROHM Semiconductor U.S.A., LLC, will participate in Applied Power Electronics Conference (APEC) 2025, the premier power ...

The ultimate power semiconductor switch (transistor) can block voltage and allow current flow in two directions, with the highest efficiency. Navitas’ leadership in GaN innovation has delivered this ...

"Today, inverters for EV powertrains either use IGBTs which are low cost but inefficient at light load conditions, or SiC devices which are very efficient but also expensive. Our new Combo ICeGaN ...

"Today, inverters for EV powertrains either use IGBTs which are low cost but inefficient at light load conditions, or SiC devices which are very efficient but also expensive. Our new Combo ICeGaN ...